Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates

J. M. Redwing; M. A. Tischler; J. S. Flynn; S. Elhamri; M. Ahoujja; R. S. Newrock; W. C. Mitchel

doi:10.1063/1.117096

Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates

J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock, W. C. Mitchel

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Abstract

High quality Al_0.15Ga_0.85WGaN heterostructures have been fabricated on 6H-SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. The highest low temperature 2DEG mobility, 7500 cm²/V s, was measured in AlGaN/ GaN grown on 6H-SiC; the sheet carrier density was 6×10¹² cm^-2. Strong, well resolved, Shubnikov-de Haas oscillations were observed in fields as low as 3 T and persisted to temperatures as high as 15 K. Hall effect measurements also revealed the presence of well-defined plateaus in the Hall resistance. The high quality 2DEG properties of the AlGaN/GaN heterostructures grown on 6H-SiC are attributed to the absence of significant parallel conduction paths in the material.

Original language	English (US)
Pages (from-to)	963-965
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	7
DOIs	https://doi.org/10.1063/1.117096
State	Published - Aug 12 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{b45ec6eaa6fc41c091338a39234d0a87,

title = "Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates",

abstract = "High quality Al0.15Ga0.85WGaN heterostructures have been fabricated on 6H-SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. The highest low temperature 2DEG mobility, 7500 cm2/V s, was measured in AlGaN/ GaN grown on 6H-SiC; the sheet carrier density was 6×1012 cm-2. Strong, well resolved, Shubnikov-de Haas oscillations were observed in fields as low as 3 T and persisted to temperatures as high as 15 K. Hall effect measurements also revealed the presence of well-defined plateaus in the Hall resistance. The high quality 2DEG properties of the AlGaN/GaN heterostructures grown on 6H-SiC are attributed to the absence of significant parallel conduction paths in the material.",

author = "Redwing, {J. M.} and Tischler, {M. A.} and Flynn, {J. S.} and S. Elhamri and M. Ahoujja and Newrock, {R. S.} and Mitchel, {W. C.}",

year = "1996",

month = aug,

day = "12",

doi = "10.1063/1.117096",

language = "English (US)",

volume = "69",

pages = "963--965",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates

AU - Redwing, J. M.

AU - Tischler, M. A.

AU - Flynn, J. S.

AU - Elhamri, S.

AU - Ahoujja, M.

AU - Newrock, R. S.

AU - Mitchel, W. C.

PY - 1996/8/12

Y1 - 1996/8/12

N2 - High quality Al0.15Ga0.85WGaN heterostructures have been fabricated on 6H-SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. The highest low temperature 2DEG mobility, 7500 cm2/V s, was measured in AlGaN/ GaN grown on 6H-SiC; the sheet carrier density was 6×1012 cm-2. Strong, well resolved, Shubnikov-de Haas oscillations were observed in fields as low as 3 T and persisted to temperatures as high as 15 K. Hall effect measurements also revealed the presence of well-defined plateaus in the Hall resistance. The high quality 2DEG properties of the AlGaN/GaN heterostructures grown on 6H-SiC are attributed to the absence of significant parallel conduction paths in the material.

AB - High quality Al0.15Ga0.85WGaN heterostructures have been fabricated on 6H-SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. The highest low temperature 2DEG mobility, 7500 cm2/V s, was measured in AlGaN/ GaN grown on 6H-SiC; the sheet carrier density was 6×1012 cm-2. Strong, well resolved, Shubnikov-de Haas oscillations were observed in fields as low as 3 T and persisted to temperatures as high as 15 K. Hall effect measurements also revealed the presence of well-defined plateaus in the Hall resistance. The high quality 2DEG properties of the AlGaN/GaN heterostructures grown on 6H-SiC are attributed to the absence of significant parallel conduction paths in the material.

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DO - 10.1063/1.117096

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates

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