TY - GEN
T1 - Two-dimensional nanoelectromechanical systems (2D NEMS) via atomically-thin semiconducting crystals vibrating at radio frequencies
AU - Feng, Philip X.L.
AU - Wang, Zenghui
AU - Lee, Jaesung
AU - Yang, Rui
AU - Zheng, Xuqian
AU - He, Keliang
AU - Shan, Jie
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2015/2/20
Y1 - 2015/2/20
N2 - We report on the initial explorations of engineering atomically-thin semiconducting crystals into a new class of two-dimensional nanoelectromechanical systems (2D NEMS) that are attractive for realizing ultimately thin 2D transducers for embedding in both planar and curved systems. We describe the first resonant NEMS operating at radio frequencies (RF), based on MoS2, a hallmark of 2D semiconducting crystals derived from layered materials in transition metal dichalcogenides (TMDCs). Through a series of careful measurements and analyses, we demonstrate a family of MoS2 2D NEMS resonators possessing very high fundamental-mode frequencies (f0∼120MHz, in the VHF band), very broad dynamic range (DR∼70-110dB), rich nonlinear dynamics, and outstanding electrical tunability.
AB - We report on the initial explorations of engineering atomically-thin semiconducting crystals into a new class of two-dimensional nanoelectromechanical systems (2D NEMS) that are attractive for realizing ultimately thin 2D transducers for embedding in both planar and curved systems. We describe the first resonant NEMS operating at radio frequencies (RF), based on MoS2, a hallmark of 2D semiconducting crystals derived from layered materials in transition metal dichalcogenides (TMDCs). Through a series of careful measurements and analyses, we demonstrate a family of MoS2 2D NEMS resonators possessing very high fundamental-mode frequencies (f0∼120MHz, in the VHF band), very broad dynamic range (DR∼70-110dB), rich nonlinear dynamics, and outstanding electrical tunability.
UR - http://www.scopus.com/inward/record.url?scp=84938281622&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84938281622&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2014.7047008
DO - 10.1109/IEDM.2014.7047008
M3 - Conference contribution
AN - SCOPUS:84938281622
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 8.1.1-8.1.4
BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Y2 - 15 December 2014 through 17 December 2014
ER -