Two-dimensional tantalum disulfide: Controlling structure and properties via synthesis

Rui Zhao, Benjamin Grisafe, Ram Krishna Ghosh, Stephen Holoviak, Baoming Wang, Ke Wang, Natalie Briggs, Aman Haque, Suman Datta, Joshua Robinson

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase transition induced electronic property modulation at low temperature. However, the appropriate phase must be grown to enable the semiconductor/metal transition that is of interest for next generation electronic applications. In this work, we demonstrate direct and controllable synthesis of ultra-thin 1T-TaS2 and 2H-TaS2 on a variety of substrates (sapphire, SiO2/Si, and graphene) via powder vapor deposition. The synthesis process leads to single crystal domains ranging from 20 to 200 nm thick and 1-10 μm on a side. The TaS2 phase (1T or 2H) is controlled by synthesis temperature, which subsequently is shown to control the electronic properties. Furthermore, this work constitutes the first demonstration of a metal-insulator phase transition in directly synthesized 1T-TaS2 films and domains by electronic means.

Original languageEnglish (US)
Article number025001
Journal2D Materials
Issue number2
StatePublished - Jan 2 2018

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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