Ultra-Low Power 3D NC-FinFET-based Monolithic 3D+ -IC with Computing-in-Memory for Intelligent IoT Devices

Fu Kuo Hsueh; Wei Hao Chen; Kai Shin Li; Chang Hong Shen; Jia Min Shieh; Chun Ying Lee; Bo Yuan Chen; Hsiu Chih Chen; Chih Chao Yang; Wen Hsien Huang; Kun Ming Chen; Guo Wei Huang; Peng Chen; Yung Ning Tu; Srivatsa Srinivasa; Vijaykrishnan Narayanan; Meng Fan Chang; Wen Kuan Yeh

doi:10.1109/IEDM.2018.8614697

Ultra-Low Power 3D NC-FinFET-based Monolithic 3D⁺ -IC with Computing-in-Memory for Intelligent IoT Devices

Fu Kuo Hsueh, Wei Hao Chen, Kai Shin Li, Chang Hong Shen, Jia Min Shieh, Chun Ying Lee, Bo Yuan Chen, Hsiu Chih Chen, Chih Chao Yang, Wen Hsien Huang, Kun Ming Chen, Guo Wei Huang, Peng Chen, Yung Ning Tu, Srivatsa Srinivasa, Vijaykrishnan Narayanan, Meng Fan Chang, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D⁺-IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO₂ interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZrO₂), and far-infrared laser activation. The proposed stackable 3D NC-FinFETs thus fabricated exhibit record-low sub-threshold swing (NC-nFinFET: 45mV/dec and NC-pFinFET: 50mV/dec) and high I_on/I_off (>10⁶) that enable ultra-low power operation ( V DD=100 mV) of CMOS inverter and SRAM. Moreover, above mentioned features of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry.

Original language	English (US)
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15.1.1-15.1.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614697
State	Published - Jul 2 2018
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: Dec 1 2018 → Dec 5 2018

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	12/1/18 → 12/5/18

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2018.8614697

Cite this

Hsueh, F. K., Chen, W. H., Li, K. S., Shen, C. H., Shieh, J. M., Lee, C. Y., Chen, B. Y., Chen, H. C., Yang, C. C., Huang, W. H., Chen, K. M., Huang, G. W., Chen, P., Tu, Y. N., Srinivasa, S., Narayanan, V., Chang, M. F., & Yeh, W. K. (2018). Ultra-Low Power 3D NC-FinFET-based Monolithic 3D⁺ -IC with Computing-in-Memory for Intelligent IoT Devices. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 15.1.1-15.1.4). Article 8614697 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614697

@inproceedings{7a9803da8c3641be8388c389e5958ef8,

title = "Ultra-Low Power 3D NC-FinFET-based Monolithic 3D+ -IC with Computing-in-Memory for Intelligent IoT Devices",

abstract = "For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D+-IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO2 interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZrO2), and far-infrared laser activation. The proposed stackable 3D NC-FinFETs thus fabricated exhibit record-low sub-threshold swing (NC-nFinFET: 45mV/dec and NC-pFinFET: 50mV/dec) and high Ion/Ioff (>106) that enable ultra-low power operation ( V DD=100 mV) of CMOS inverter and SRAM. Moreover, above mentioned features of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry.",

author = "Hsueh, {Fu Kuo} and Chen, {Wei Hao} and Li, {Kai Shin} and Shen, {Chang Hong} and Shieh, {Jia Min} and Lee, {Chun Ying} and Chen, {Bo Yuan} and Chen, {Hsiu Chih} and Yang, {Chih Chao} and Huang, {Wen Hsien} and Chen, {Kun Ming} and Huang, {Guo Wei} and Peng Chen and Tu, {Yung Ning} and Srivatsa Srinivasa and Vijaykrishnan Narayanan and Chang, {Meng Fan} and Yeh, {Wen Kuan}",

note = "Funding Information: In this work, we propose an ultra-low power ferroelectric FinFET-based monolithic 3D+IC technology with integration of logic, SRAM, and near memory computing (NMC) circuit. The 3D NC-FinFETs exhibit record-low sub-threshold swing and high Ion/Ioff. Acknowledgements The authors would like to thank the support of Ministry of Science and Technology (MoST) and National Applied Research Laboratories (NARLabs) in Taiwan. References: Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/IEDM.2018.8614697",

language = "English (US)",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "15.1.1--15.1.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

address = "United States",

}

Hsueh, FK, Chen, WH, Li, KS, Shen, CH, Shieh, JM, Lee, CY, Chen, BY, Chen, HC, Yang, CC, Huang, WH, Chen, KM, Huang, GW, Chen, P, Tu, YN, Srinivasa, S, Narayanan, V, Chang, MF & Yeh, WK 2018, Ultra-Low Power 3D NC-FinFET-based Monolithic 3D⁺ -IC with Computing-in-Memory for Intelligent IoT Devices. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614697, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 15.1.1-15.1.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 12/1/18. https://doi.org/10.1109/IEDM.2018.8614697

Ultra-Low Power 3D NC-FinFET-based Monolithic 3D⁺ -IC with Computing-in-Memory for Intelligent IoT Devices. / Hsueh, Fu Kuo; Chen, Wei Hao; Li, Kai Shin et al.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 15.1.1-15.1.4 8614697 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Ultra-Low Power 3D NC-FinFET-based Monolithic 3D+ -IC with Computing-in-Memory for Intelligent IoT Devices

AU - Hsueh, Fu Kuo

AU - Chen, Wei Hao

AU - Li, Kai Shin

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Lee, Chun Ying

AU - Chen, Bo Yuan

AU - Chen, Hsiu Chih

AU - Yang, Chih Chao

AU - Huang, Wen Hsien

AU - Chen, Kun Ming

AU - Huang, Guo Wei

AU - Chen, Peng

AU - Tu, Yung Ning

AU - Srinivasa, Srivatsa

AU - Narayanan, Vijaykrishnan

AU - Chang, Meng Fan

AU - Yeh, Wen Kuan

N1 - Funding Information: In this work, we propose an ultra-low power ferroelectric FinFET-based monolithic 3D+IC technology with integration of logic, SRAM, and near memory computing (NMC) circuit. The 3D NC-FinFETs exhibit record-low sub-threshold swing and high Ion/Ioff. Acknowledgements The authors would like to thank the support of Ministry of Science and Technology (MoST) and National Applied Research Laboratories (NARLabs) in Taiwan. References: Publisher Copyright: © 2018 IEEE.

PY - 2018/7/2

Y1 - 2018/7/2

N2 - For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D+-IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO2 interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZrO2), and far-infrared laser activation. The proposed stackable 3D NC-FinFETs thus fabricated exhibit record-low sub-threshold swing (NC-nFinFET: 45mV/dec and NC-pFinFET: 50mV/dec) and high Ion/Ioff (>106) that enable ultra-low power operation ( V DD=100 mV) of CMOS inverter and SRAM. Moreover, above mentioned features of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry.

AB - For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D+-IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO2 interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZrO2), and far-infrared laser activation. The proposed stackable 3D NC-FinFETs thus fabricated exhibit record-low sub-threshold swing (NC-nFinFET: 45mV/dec and NC-pFinFET: 50mV/dec) and high Ion/Ioff (>106) that enable ultra-low power operation ( V DD=100 mV) of CMOS inverter and SRAM. Moreover, above mentioned features of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry.

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U2 - 10.1109/IEDM.2018.8614697

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M3 - Conference contribution

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.1.1-15.1.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

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Hsueh FK, Chen WH, Li KS, Shen CH, Shieh JM, Lee CY et al. Ultra-Low Power 3D NC-FinFET-based Monolithic 3D⁺ -IC with Computing-in-Memory for Intelligent IoT Devices. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 15.1.1-15.1.4. 8614697. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614697