Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes

Ning Li; Kevin Han; William Spratt; Stephen Bedell; John Ott; Marinus Hopstaken; Frank Libsch; Qinglong Li; Devendra Sadana

doi:10.1038/s41566-019-0463-x

Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes

Ning Li
, Kevin Han
, William Spratt
, Stephen Bedell
, John Ott
, Marinus Hopstaken
, Frank Libsch
, Qinglong Li
, Devendra Sadana

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Conventional light-emitting diodes (LEDs) face an efficiency droop at low current due to non-radiative recombination overtaking radiative recombination at low carrier density. To overcome this universal problem, we develop LEDs with high efficiency at ultralow current and voltage, using a novel quantum well design and high-quality interfaces to suppress non-radiative recombination and enhance radiative recombination. The device exhibits close to unity internal quantum efficiency at a low current density of

Original language	English (US)
Pages (from-to)	588-592
Number of pages	5
Journal	Nature Photonics
Volume	13
Issue number	9
DOIs	https://doi.org/10.1038/s41566-019-0463-x
State	Published - Jan 2019

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abstract = "Conventional light-emitting diodes (LEDs) face an efficiency droop at low current due to non-radiative recombination overtaking radiative recombination at low carrier density. To overcome this universal problem, we develop LEDs with high efficiency at ultralow current and voltage, using a novel quantum well design and high-quality interfaces to suppress non-radiative recombination and enhance radiative recombination. The device exhibits close to unity internal quantum efficiency at a low current density of ",

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AU - Hopstaken, Marinus

AU - Libsch, Frank

AU - Li, Qinglong

AU - Sadana, Devendra

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N2 - Conventional light-emitting diodes (LEDs) face an efficiency droop at low current due to non-radiative recombination overtaking radiative recombination at low carrier density. To overcome this universal problem, we develop LEDs with high efficiency at ultralow current and voltage, using a novel quantum well design and high-quality interfaces to suppress non-radiative recombination and enhance radiative recombination. The device exhibits close to unity internal quantum efficiency at a low current density of

AB - Conventional light-emitting diodes (LEDs) face an efficiency droop at low current due to non-radiative recombination overtaking radiative recombination at low carrier density. To overcome this universal problem, we develop LEDs with high efficiency at ultralow current and voltage, using a novel quantum well design and high-quality interfaces to suppress non-radiative recombination and enhance radiative recombination. The device exhibits close to unity internal quantum efficiency at a low current density of

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Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes

Abstract

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