TY - JOUR
T1 - Ultra low temperature poly-crystalline silicon thin film transistors on flexible pet substrates for display applications
AU - Paydavosi, Sara
AU - Ebrahimi, Seyedehaida
AU - Mohajerzadeh, Shams
AU - Behnam, Ashkan
AU - Sanaie, Zeinab
AU - Robertson, M. D.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.
AB - Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.
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M3 - Conference article
AN - SCOPUS:34748826831
SN - 1083-1312
SP - 112
EP - 115
JO - SID Conference Record of the International Display Research Conference
JF - SID Conference Record of the International Display Research Conference
T2 - SID 26th International Display Research Conference
Y2 - 18 September 2006 through 21 September 2006
ER -