Abstract
Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 112-115 |
| Number of pages | 4 |
| Journal | SID Conference Record of the International Display Research Conference |
| State | Published - Dec 1 2006 |
| Event | SID 26th International Display Research Conference - Kent, OH, United States Duration: Sep 18 2006 → Sep 21 2006 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering