Abstract
The introduction of new substrate materials into the world of electronics has previously opened up new possibilities for novel applications and device designs. Here, the use of ion-exchanged sodium aluminosilicate (NAS) glass is presented as a new type of substrate that is not only highly damage resistant, but also allows the fabrication of high performance organic electronic devices. The smoothness of the NAS glass surface enables favorable growth of the semiconductor layer, enabling high charge carrier mobilities for typical organic semiconductors, such as pentacene or C60, and a polymer semiconductor. No degradation of the device performance is observed as a result of ion migration into the active device region, and no compromise in substrate strength due to the processing conditions is made. This work suggests the possibility of new, highly durable electronic devices on glass in large area format. An ion-exchanged glass is introduced as a new substrate that is not only virtually unbreakable, therefore overcoming the brittleness that Si wafers possess, but also allows fabrication of high performance organic electronic devices. The smoothness of the surface of this fusion-drawn glass enables favorable large grain growth of the semiconductor, enabling high charge carrier mobilities of all kinds of organic semiconductors, such as pentacene or C60.
Original language | English (US) |
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Pages (from-to) | 3233-3238 |
Number of pages | 6 |
Journal | Advanced Functional Materials |
Volume | 23 |
Issue number | 25 |
DOIs | |
State | Published - Jul 5 2013 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Condensed Matter Physics
- General Materials Science
- Electrochemistry
- Biomaterials