Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

Peng Ding; Chen Chen; Wuchang Ding; Feng Yang; Yongbo Su; Dahai Wang; Zhi Jin

doi:10.1016/j.sse.2016.05.011

Ultra-thin 20 nm-PECVD-Si₃N₄ surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

Peng Ding
, Chen Chen
, Wuchang Ding
, Feng Yang
, Yongbo Su
, Dahai Wang
, Zhi Jin

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances. In the present work, effect of surface passivation was studied using an ultra-thin 20 nm PECVD Si₃N₄ layer. In DC performance, after passivation, its maximum transconductance (g_m_,_MAX) is increased up to 1200 mS/mm. It is found that, by scaling the thickness of Si₃N₄ layer, the increase in C_gd after passivation can be effectively limited verified by small-signal modeling. As a result, S-parameter measurements demonstrate an increase in extracted f_max up to 450 GHz after passivation. The results show that, by using an ultra-thin Si₃N₄ surface passivation, its RF performance can be improved in InP-based HEMTs.

Original language	English (US)
Pages (from-to)	1-5
Number of pages	5
Journal	Solid-State Electronics
Volume	123
DOIs	https://doi.org/10.1016/j.sse.2016.05.011
State	Published - Sep 1 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2016.05.011

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title = "Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance",

abstract = "Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances. In the present work, effect of surface passivation was studied using an ultra-thin 20 nm PECVD Si3N4 layer. In DC performance, after passivation, its maximum transconductance (gm,MAX) is increased up to 1200 mS/mm. It is found that, by scaling the thickness of Si3N4 layer, the increase in Cgd after passivation can be effectively limited verified by small-signal modeling. As a result, S-parameter measurements demonstrate an increase in extracted fmax up to 450 GHz after passivation. The results show that, by using an ultra-thin Si3N4 surface passivation, its RF performance can be improved in InP-based HEMTs.",

author = "Peng Ding and Chen Chen and Wuchang Ding and Feng Yang and Yongbo Su and Dahai Wang and Zhi Jin",

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T1 - Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

AU - Ding, Peng

AU - Chen, Chen

AU - Ding, Wuchang

AU - Yang, Feng

AU - Su, Yongbo

AU - Wang, Dahai

AU - Jin, Zhi

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances. In the present work, effect of surface passivation was studied using an ultra-thin 20 nm PECVD Si3N4 layer. In DC performance, after passivation, its maximum transconductance (gm,MAX) is increased up to 1200 mS/mm. It is found that, by scaling the thickness of Si3N4 layer, the increase in Cgd after passivation can be effectively limited verified by small-signal modeling. As a result, S-parameter measurements demonstrate an increase in extracted fmax up to 450 GHz after passivation. The results show that, by using an ultra-thin Si3N4 surface passivation, its RF performance can be improved in InP-based HEMTs.

AB - Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances. In the present work, effect of surface passivation was studied using an ultra-thin 20 nm PECVD Si3N4 layer. In DC performance, after passivation, its maximum transconductance (gm,MAX) is increased up to 1200 mS/mm. It is found that, by scaling the thickness of Si3N4 layer, the increase in Cgd after passivation can be effectively limited verified by small-signal modeling. As a result, S-parameter measurements demonstrate an increase in extracted fmax up to 450 GHz after passivation. The results show that, by using an ultra-thin Si3N4 surface passivation, its RF performance can be improved in InP-based HEMTs.

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DO - 10.1016/j.sse.2016.05.011

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JO - Solid-State Electronics

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ER -

Ultra-thin 20 nm-PECVD-Si₃N₄ surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

Abstract

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