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Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

  • Peng Ding
  • , Chen Chen
  • , Wuchang Ding
  • , Feng Yang
  • , Yongbo Su
  • , Dahai Wang
  • , Zhi Jin

Research output: Contribution to journal › Article › peer-review

17   Link opens in a new tab Scopus citations

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