Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker, Hsien Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sriram Krishnamoorthy, Sukwon Choi

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today’s wide band gap power electronics. However, the most critical challenge to the commercialization of Ga2O3 electronics is overheating, which impacts the device performance and reliability. We fabricated a Ga2O3/4H-SiC composite wafer using a fusion-bonding method. A low-temperature (≤600 °C) epitaxy and device processing scheme was developed to fabricate MOSFETs on the composite wafer. The low-temperature-grown epitaxial Ga2O3 devices deliver high thermal performance (56% reduction in channel temperature) and a power figure of merit of (∼300 MW/cm2), which is the highest among heterogeneously integrated Ga2O3 devices reported to date. Simulations calibrated based on thermal characterization results of the Ga2O3-on-SiC MOSFET reveal that a Ga2O3/diamond composite wafer with a reduced Ga2O3 thickness (∼1 μm) and a thinner bonding interlayer (<10 nm) can reduce the device thermal impedance to a level lower than that of today’s GaN-on-SiC power switches.

Original languageEnglish (US)
Pages (from-to)7137-7147
Number of pages11
JournalACS Applied Materials and Interfaces
Volume15
Issue number5
DOIs
StatePublished - Feb 8 2023

All Science Journal Classification (ASJC) codes

  • General Materials Science

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