Ultrafast carrier dynamics in (Bi1-xInx)2Se3 Thin films: From topological to band insulator

Kateryna Kushnir, Teng Shi, Zhengtianye Wang, Stephanie Law, Lyubov Titova

Research output: Contribution to journalConference articlepeer-review


Replacing some of the Bi atoms with In transforms Bi2Se3 from a topological to a band insulator. We have used time-resolved terahertz spectroscopy to study carrier dynamics in (Bi1-xInx)2Se3 films across this transition.

Original languageEnglish (US)
Article numberSW4F.5
JournalOptics InfoBase Conference Papers
StatePublished - 2021
EventCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: May 9 2021May 14 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Cite this