Ultrafast crystallization kinetics in (Pb,La)(Zr_0.30Ti0.70) O₃ thin films by pulsed excimer laser annealing

Keyphrases

• Dielectric Properties 100%
• Crystallization Kinetics 100%
• Rapid Crystallization 100%
• Pulsed Excimer Laser 100%
• Grain Size 50%
• Crystallization 50%
• Electron Microscopy 50%
• Growth Mechanism 50%
• Well-defined 50%
• Energy Density 50%
• Ferroelectric Properties 50%
• Perovskite 50%
• Silicon Substrate 50%
• Annealing 50%
• Thick Film 50%
• Substrate Temperature 50%
• Exposure Time 50%
• Defect Concentration 50%
• Rapid Thermal Annealing 50%
• Pb(Zr,Ti)O3 50%
• Laser Pulse 50%
• Non-isothermal Conditions 50%
• Rate Dependence 50%
• Pulse Width 50%
• Pulse Exposure 50%
• Nucleation Mechanism 50%
• Laser Annealing 50%
• Ns Pulse 50%
• Growth Front 50%
• LaNiO3 50%
• Total Exposure 50%
• KrF Excimer Laser 50%
• PLZT Thin Film 50%

Engineering

• Thin Films 100%
• Dielectrics 100%
• Excimer Laser 100%
• Growth Mechanism 50%
• Silicon Substrate 50%
• Exposure Time 50%
• Crystallizes 50%
• Substrate Temperature 50%
• Nucleation Mechanism 50%
• Nonisothermal Condition 50%
• Rapid Thermal Annealing 50%
• Pulse Duration 50%

Material Science

• Film 100%
• Thin Films 100%
• Annealing 100%
• Crystallization Kinetics 100%
• Dielectric Property 40%
• Nucleation 40%
• Grain Size 20%
• Silicon 20%
• Electron Microscopy 20%
• Energy Density 20%
• Ferroelectricity 20%
• Thick Films 20%
• Laser Pulse 20%