Abstract
GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.
Original language | English (US) |
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Pages (from-to) | 1560-1562 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 15 |
DOIs | |
State | Published - 1990 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)