Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation

S. Ashok; Y. G. Wang; O. S. Nakagawa

doi:10.1063/1.103353

Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation

S. Ashok
, Y. G. Wang
, O. S. Nakagawa

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.

Original language	English (US)
Pages (from-to)	1560-1562
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	15
DOIs	https://doi.org/10.1063/1.103353
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103353

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title = "Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation",

abstract = "GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.",

author = "S. Ashok and Wang, \{Y. G.\} and Nakagawa, \{O. S.\}",

year = "1990",

doi = "10.1063/1.103353",

language = "English (US)",

volume = "57",

pages = "1560--1562",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

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TY - JOUR

T1 - Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation

AU - Ashok, S.

AU - Wang, Y. G.

AU - Nakagawa, O. S.

PY - 1990

Y1 - 1990

N2 - GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.

AB - GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.

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UR - https://www.scopus.com/pages/publications/36549091071#tab=citedBy

U2 - 10.1063/1.103353

DO - 10.1063/1.103353

M3 - Article

AN - SCOPUS:36549091071

SN - 0003-6951

VL - 57

SP - 1560

EP - 1562

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation

Abstract

All Science Journal Classification (ASJC) codes

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