Keyphrases
Ultra-low
100%
Contact Resistance
100%
Ohmic
100%
Low Annealing Temperature
100%
GaN Heterostructure
100%
High-resolution Transmission Electron Microscopy (HRTEM)
33%
Transmission Electron Microscopy Analysis
33%
Electrical Characterization
33%
TiAl
33%
Interfacial Layer
33%
Aluminum Gallium Nitride (AlGaN)
33%
Layer Formation
33%
Microstructural Characterization
33%
Al-Ti
33%
Low Contact Resistance
33%
Catalytic Role
33%
AlGaN Barrier
33%
Optimized Thickness
33%
Specific Contact Resistivity
33%
I-V Characterization
33%
Material Science
Heterojunction
100%
Annealing
100%
Contact Resistance
100%
Electron Microscopy
33%
Electrical Resistivity
33%
High-Resolution Transmission Electron Microscopy
33%
Aluminum Nitride
33%
Engineering
Heterostructures
100%
Ohmic Contacts
100%
Annealing Temperature
100%
High Resolution
50%
Interfacial Layer
50%