TY - JOUR
T1 - Ultralow-Loss Substrate-Integrated Waveguides in Alumina Ribbon Ceramic Substrates for 75-170 GHz Wireless Applications
AU - Aslani-Amoli, Nahid
AU - Rehman, Mutee ur
AU - Vijay Kumar, Lakshmi Narasimha
AU - Moradinia, Arya
AU - Liu, Fuhan
AU - Swaminathan, Madhavan
AU - Zhuang, Cheng Gang
AU - Vaddi, Rajesh
AU - Seok, Seong Ho
AU - Kim, Cheolbok
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023/10/1
Y1 - 2023/10/1
N2 - This letter reports, for the first time, the ultralow insertion loss (IL) of substrate-integrated waveguides (SIWs) in alumina ribbon ceramic (ARC) substrate, a newly developed material technology at Corning Inc., for millimeter-wave (mm-wave) packaging applications. Demonstrated on an 80- $\mu \text{m}$ -thick ARC substrate using a semi-additive patterning (SAP) process, SIWs are fed by broadband microstrip taper transitions and characterized based on conductor-backed coplanar waveguide (CBCPW)-to-microstrip transitions and microstrip feedlines in 75-110 GHz (W-band) and 110-170 GHz (D-band), respectively. Using two-tier calibration, the average measured IL of ARC-based SIWs in W- and D-bands is extracted to be 0.13 ± 0.02 and 0.155 ± 0.01 dB/mm, respectively, showing an excellent agreement with simulated and theoretical modeling results. According to comparisons, SIWs on ARC outperform those on other substrates in terms of IL over 75-170 GHz, exhibit excellent performance, and provide easier fabrication as compared to air-filled SIWs. These first results reveal the potential of ARC substrates for the development of ultrathin, high-performance passive components and modules based on SIW technology in mm-wave frequency ranges.
AB - This letter reports, for the first time, the ultralow insertion loss (IL) of substrate-integrated waveguides (SIWs) in alumina ribbon ceramic (ARC) substrate, a newly developed material technology at Corning Inc., for millimeter-wave (mm-wave) packaging applications. Demonstrated on an 80- $\mu \text{m}$ -thick ARC substrate using a semi-additive patterning (SAP) process, SIWs are fed by broadband microstrip taper transitions and characterized based on conductor-backed coplanar waveguide (CBCPW)-to-microstrip transitions and microstrip feedlines in 75-110 GHz (W-band) and 110-170 GHz (D-band), respectively. Using two-tier calibration, the average measured IL of ARC-based SIWs in W- and D-bands is extracted to be 0.13 ± 0.02 and 0.155 ± 0.01 dB/mm, respectively, showing an excellent agreement with simulated and theoretical modeling results. According to comparisons, SIWs on ARC outperform those on other substrates in terms of IL over 75-170 GHz, exhibit excellent performance, and provide easier fabrication as compared to air-filled SIWs. These first results reveal the potential of ARC substrates for the development of ultrathin, high-performance passive components and modules based on SIW technology in mm-wave frequency ranges.
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U2 - 10.1109/LMWT.2023.3304949
DO - 10.1109/LMWT.2023.3304949
M3 - Article
AN - SCOPUS:85181826254
SN - 2771-957X
VL - 33
SP - 1415
EP - 1418
JO - IEEE Microwave and Wireless Technology Letters
JF - IEEE Microwave and Wireless Technology Letters
IS - 10
ER -