Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors

Thomas F. Schranghamer; Najam U. Sakib; Muhtasim Ul Karim Sadaf; Shiva Subbulakshmi Radhakrishnan; Rahul Pendurthi; Ama Duffie Agyapong; Sergei P. Stepanoff; Riccardo Torsi; Chen Chen; Joan M. Redwing; Joshua A. Robinson; Douglas E. Wolfe; Suzanne E. Mohney; Saptarshi Das

doi:10.1021/acs.nanolett.3c00466

Ultrascaled Contacts to Monolayer MoS₂ Field Effect Transistors

Thomas F. Schranghamer, Najam U. Sakib, Muhtasim Ul Karim Sadaf, Shiva Subbulakshmi Radhakrishnan, Rahul Pendurthi, Ama Duffie Agyapong, Sergei P. Stepanoff, Riccardo Torsi, Chen Chen, Joan M. Redwing, Joshua A. Robinson, Douglas E. Wolfe, Suzanne E. Mohney, Saptarshi Das

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (L_CH) and contact length (L_C), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS₂ FETs with L_CH down to 100 nm and L_C down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 μA/μm, when L_C is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.

Original language	English (US)
Pages (from-to)	3426-3434
Number of pages	9
Journal	Nano letters
Volume	23
Issue number	8
DOIs	https://doi.org/10.1021/acs.nanolett.3c00466
State	Published - Apr 26 2023

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.3c00466

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Schranghamer, T. F., Sakib, N. U., Sadaf, M. U. K., Subbulakshmi Radhakrishnan, S., Pendurthi, R., Agyapong, A. D., Stepanoff, S. P., Torsi, R., Chen, C., Redwing, J. M., Robinson, J. A., Wolfe, D. E., Mohney, S. E., & Das, S. (2023). Ultrascaled Contacts to Monolayer MoS₂ Field Effect Transistors. Nano letters, 23(8), 3426-3434. https://doi.org/10.1021/acs.nanolett.3c00466

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abstract = "Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (LCH) and contact length (LC), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS2 FETs with LCH down to 100 nm and LC down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 μA/μm, when LC is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.",

author = "Schranghamer, {Thomas F.} and Sakib, {Najam U.} and Sadaf, {Muhtasim Ul Karim} and {Subbulakshmi Radhakrishnan}, Shiva and Rahul Pendurthi and Agyapong, {Ama Duffie} and Stepanoff, {Sergei P.} and Riccardo Torsi and Chen Chen and Redwing, {Joan M.} and Robinson, {Joshua A.} and Wolfe, {Douglas E.} and Mohney, {Suzanne E.} and Saptarshi Das",

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AU - Schranghamer, Thomas F.

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AU - Sadaf, Muhtasim Ul Karim

AU - Subbulakshmi Radhakrishnan, Shiva

AU - Pendurthi, Rahul

AU - Agyapong, Ama Duffie

AU - Stepanoff, Sergei P.

AU - Torsi, Riccardo

AU - Chen, Chen

AU - Redwing, Joan M.

AU - Robinson, Joshua A.

AU - Wolfe, Douglas E.

AU - Mohney, Suzanne E.

AU - Das, Saptarshi

PY - 2023/4/26

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N2 - Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (LCH) and contact length (LC), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS2 FETs with LCH down to 100 nm and LC down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 μA/μm, when LC is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.

AB - Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (LCH) and contact length (LC), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS2 FETs with LCH down to 100 nm and LC down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 μA/μm, when LC is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.

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Ultrascaled Contacts to Monolayer MoS₂ Field Effect Transistors

Abstract

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