Ultrathin body poly(3-hexylthiophene) transistors with improved short-channel performance

Chenchen Wang; Jonathan Rivnay; Scott Himmelberger; Kiarash Vakhshouri; Michael F. Toney; Enrique D. Gomez; Alberto Salleo

doi:10.1021/am3027103

Ultrathin body poly(3-hexylthiophene) transistors with improved short-channel performance

Chenchen Wang, Jonathan Rivnay, Scott Himmelberger, Kiarash Vakhshouri, Michael F. Toney, Enrique D. Gomez, Alberto Salleo

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.

Original language	English (US)
Pages (from-to)	2342-2346
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	7
DOIs	https://doi.org/10.1021/am3027103
State	Published - Apr 10 2013

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1021/am3027103

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title = "Ultrathin body poly(3-hexylthiophene) transistors with improved short-channel performance",

abstract = "The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.",

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AU - Wang, Chenchen

AU - Rivnay, Jonathan

AU - Himmelberger, Scott

AU - Vakhshouri, Kiarash

AU - Toney, Michael F.

AU - Gomez, Enrique D.

AU - Salleo, Alberto

PY - 2013/4/10

Y1 - 2013/4/10

N2 - The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.

AB - The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.

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Ultrathin body poly(3-hexylthiophene) transistors with improved short-channel performance

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