TY - GEN
T1 - Ultraviolet photodetectlon properties of ZnO microtubes
AU - Cheng, Jiping
AU - Fu, Ming
AU - Zhang, Yunjin
AU - Guo, Ruyan
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - Photodetectors based on wide-bandgap semiconductors have demonstrated several advantages over traditional ultraviolet (UV) detectors (photomultiplier tubes and Si-based UV detectors) such as low power consumption, high stability, and no need of other optical filters. ZnO stands a good chance of being a candidate material for solar-blind UV detection because of its direct bandgap of 3.37eV and high photoresponse. In this work, single crystal ZnO microtubes synthesized using a microwave-heating growth method and their UV photodetection properties were studied. The ZnO microtubes exhibited relatively fast UV photoresponse with a cut-off wavelength ∼370 nm, indicating their potential applications as high efficient and low cost UV detectors.
AB - Photodetectors based on wide-bandgap semiconductors have demonstrated several advantages over traditional ultraviolet (UV) detectors (photomultiplier tubes and Si-based UV detectors) such as low power consumption, high stability, and no need of other optical filters. ZnO stands a good chance of being a candidate material for solar-blind UV detection because of its direct bandgap of 3.37eV and high photoresponse. In this work, single crystal ZnO microtubes synthesized using a microwave-heating growth method and their UV photodetection properties were studied. The ZnO microtubes exhibited relatively fast UV photoresponse with a cut-off wavelength ∼370 nm, indicating their potential applications as high efficient and low cost UV detectors.
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M3 - Conference contribution
AN - SCOPUS:34250865674
SN - 0762313951
SN - 9780762313952
T3 - Materials Research Society Symposium Proceedings
SP - 15
EP - 19
BT - Zinc Oxide and Related Materials
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 1 December 2006
ER -