Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2MOSFETs Utilizing EDMR and NZFMR

Fedor V. Sharov, Stephen J. Moxim, Patrick M. Lenahan, David R. Hughart, Gaddi S. Haase, Colin G. McKay

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We investigate the initial stages of time-dependent dielectric breakdown (TDDB) in high-field stressed Si/SiO2 MOSFETs via electrically detected magnetic resonance (EDMR). As anticipated, we find that the defects dominating the initial stages of TDDB include silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers). We find that the densities of these defects increase with stress time. With similar stressing and optimized measurement temperature, we do observe EDMR of generated oxide defects known as E′ centers. The results indicate that the initial stages of TDDB in the Si/SiO2 system involves a rate limiting step of tunneling between a silicon dangling bond and an oxide defect. Additionally, we have made near-zero field magnetoresistance spectroscopy measurements, which show clear differences with stressing time; these differences are almost certainly due to a redistribution of hydrogen atoms in the oxide.

Original languageEnglish (US)
Title of host publication2021 IEEE International Integrated Reliability Workshop, IIRW 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665417945
DOIs
StatePublished - 2021
Event2021 IEEE International Integrated Reliability Workshop, IIRW 2021 - Virtual, South Lake Tahoe, United States
Duration: Oct 4 2021Oct 28 2021

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2021-October

Conference

Conference2021 IEEE International Integrated Reliability Workshop, IIRW 2021
Country/TerritoryUnited States
CityVirtual, South Lake Tahoe
Period10/4/2110/28/21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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