Unipolar poling-induced high switching speed and improved imprint behaviors for poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

Ying Hou; Zhaoyue Lü; Tiansong Pu; Yuan Zhang; Xiangjian Meng; Haisheng Xu

doi:10.1063/1.4858035

Unipolar poling-induced high switching speed and improved imprint behaviors for poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

Ying Hou, Zhaoyue Lü, Tiansong Pu, Yuan Zhang, Xiangjian Meng, Haisheng Xu

Penn State University Park

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The polarization switching and imprint behaviors with different pulse and unipolar poling processes for ferroelectric poly(vinylidene fluoride- trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. Compared with results for samples only through the certain protocol we studied previously, the much faster switching speed and lower voltage shift are observed for films with certain protocol as well as certain unipolar poling. The analyses show that these properties are strongly dependent on the directions of the switching and unipolar poling field. The results provide another effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.

Original language	English (US)
Article number	263503
Journal	Applied Physics Letters
Volume	103
Issue number	26
DOIs	https://doi.org/10.1063/1.4858035
State	Published - Dec 23 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4858035

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title = "Unipolar poling-induced high switching speed and improved imprint behaviors for poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films",

abstract = "The polarization switching and imprint behaviors with different pulse and unipolar poling processes for ferroelectric poly(vinylidene fluoride- trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. Compared with results for samples only through the certain protocol we studied previously, the much faster switching speed and lower voltage shift are observed for films with certain protocol as well as certain unipolar poling. The analyses show that these properties are strongly dependent on the directions of the switching and unipolar poling field. The results provide another effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.",

author = "Ying Hou and Zhaoyue L{\"u} and Tiansong Pu and Yuan Zhang and Xiangjian Meng and Haisheng Xu",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Contract No. 51303053) and the Fundamental Research Funds for the Central Universities (Contract No. 222201314010).",

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doi = "10.1063/1.4858035",

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T1 - Unipolar poling-induced high switching speed and improved imprint behaviors for poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

AU - Hou, Ying

AU - Lü, Zhaoyue

AU - Pu, Tiansong

AU - Zhang, Yuan

AU - Meng, Xiangjian

AU - Xu, Haisheng

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Contract No. 51303053) and the Fundamental Research Funds for the Central Universities (Contract No. 222201314010).

PY - 2013/12/23

Y1 - 2013/12/23

N2 - The polarization switching and imprint behaviors with different pulse and unipolar poling processes for ferroelectric poly(vinylidene fluoride- trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. Compared with results for samples only through the certain protocol we studied previously, the much faster switching speed and lower voltage shift are observed for films with certain protocol as well as certain unipolar poling. The analyses show that these properties are strongly dependent on the directions of the switching and unipolar poling field. The results provide another effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.

AB - The polarization switching and imprint behaviors with different pulse and unipolar poling processes for ferroelectric poly(vinylidene fluoride- trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. Compared with results for samples only through the certain protocol we studied previously, the much faster switching speed and lower voltage shift are observed for films with certain protocol as well as certain unipolar poling. The analyses show that these properties are strongly dependent on the directions of the switching and unipolar poling field. The results provide another effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.

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Unipolar poling-induced high switching speed and improved imprint behaviors for poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

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