Unipolar resistive switching of Au+-implanted ZrO2 films

Qi Liu; Shibing Long; Weihua Guan; Sen Zhang; Ming Liu; Junning Chen

doi:10.1088/1674-4926/30/4/042001

Unipolar resistive switching of Au⁺-implanted ZrO₂ films

Qi Liu, Shibing Long, Weihua Guan, Sen Zhang, Ming Liu, Junning Chen

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The resistive switching characteristics of Au⁺-implanted ZrO₂ films are investigated. The Au/Cr/Au⁺-implanted- ZrO₂/n⁺-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au⁺-implanted- ZrO₂/n⁺-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.

Original language	English (US)
Article number	042001
Journal	Journal of Semiconductors
Volume	30
Issue number	4
DOIs	https://doi.org/10.1088/1674-4926/30/4/042001
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/1674-4926/30/4/042001

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title = "Unipolar resistive switching of Au+-implanted ZrO2 films",

abstract = "The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted- ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted- ZrO2/n+-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.",

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T1 - Unipolar resistive switching of Au+-implanted ZrO2 films

AU - Liu, Qi

AU - Long, Shibing

AU - Guan, Weihua

AU - Zhang, Sen

AU - Liu, Ming

AU - Chen, Junning

PY - 2009

Y1 - 2009

N2 - The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted- ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted- ZrO2/n+-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.

AB - The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted- ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted- ZrO2/n+-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.

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Unipolar resistive switching of Au⁺-implanted ZrO₂ films

Abstract

All Science Journal Classification (ASJC) codes

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