Universal description of channel conductivity for nanotube and nanowire transistors

S. V. Rotkin; H. E. Ruda; A. Shik

doi:10.1063/1.1604462

Universal description of channel conductivity for nanotube and nanowire transistors

S. V. Rotkin, H. E. Ruda, A. Shik

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A theory of drift-diffusion transport in nanotube and nanowire transistors was developed. Two cases of a semiconductor nanowire and a single-wall nanotube were considered using self-consistent electrostatics to obtain a general expression for the transconductance. The results suggest that the quantum-wire channel model differ from a classical device theory because of the specific nanowire charge density distribution.

Original language	English (US)
Pages (from-to)	1623-1625
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	8
DOIs	https://doi.org/10.1063/1.1604462
State	Published - Aug 25 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1604462

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abstract = "A theory of drift-diffusion transport in nanotube and nanowire transistors was developed. Two cases of a semiconductor nanowire and a single-wall nanotube were considered using self-consistent electrostatics to obtain a general expression for the transconductance. The results suggest that the quantum-wire channel model differ from a classical device theory because of the specific nanowire charge density distribution.",

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AU - Ruda, H. E.

AU - Shik, A.

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N2 - A theory of drift-diffusion transport in nanotube and nanowire transistors was developed. Two cases of a semiconductor nanowire and a single-wall nanotube were considered using self-consistent electrostatics to obtain a general expression for the transconductance. The results suggest that the quantum-wire channel model differ from a classical device theory because of the specific nanowire charge density distribution.

AB - A theory of drift-diffusion transport in nanotube and nanowire transistors was developed. Two cases of a semiconductor nanowire and a single-wall nanotube were considered using self-consistent electrostatics to obtain a general expression for the transconductance. The results suggest that the quantum-wire channel model differ from a classical device theory because of the specific nanowire charge density distribution.

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Universal description of channel conductivity for nanotube and nanowire transistors

Abstract

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