Universal description of channel conductivity for nanotube and nanowire transistors

A theory of drift-diffusion transport in nanotube and nanowire transistors was developed. Two cases of a semiconductor nanowire and a single-wall nanotube were considered using self-consistent electrostatics to obtain a general expression for the transconductance. The results suggest that the quantum-wire channel model differ from a classical device theory because of the specific nanowire charge density distribution.