Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3

X. Hong; J. Hoffman; A. Posadas; K. Zou; C. H. Ahn; J. Zhu

doi:10.1063/1.3467450

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr_0.2Ti_0.8)O₃

X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

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124 Scopus citations

Abstract

We have fabricated n -layer graphene field effect transistors on epitaxial ferroelectric Pb (Zr_0.2Ti_0.8)O₃ (PZT) thin films. At low gate voltages, PZT behaves as a high- κ dielectric with κ up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.

Original language	English (US)
Article number	033114
Journal	Applied Physics Letters
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.3467450
State	Published - Jul 19 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3467450

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title = "Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3",

abstract = "We have fabricated n -layer graphene field effect transistors on epitaxial ferroelectric Pb (Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high- κ dielectric with κ up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.",

author = "X. Hong and J. Hoffman and A. Posadas and K. Zou and Ahn, {C. H.} and J. Zhu",

note = "Funding Information: We are grateful to V. Crespi, P. Eklund, V. Henrich, P. Paruch, and X. Pan for helpful discussions and S.-H. Cheng and B. Wang for technical assistance. Work at Penn State is supported by NSF NIRT under Grant No. ECS-0609243 and NSF CAREER under Grant No. DMR-0748604. Fabrication of samples at Yale is supported by NSF MRSEC under Grant No. DMR-0520495, NSF under Grant No. DMR-0705799, ONR under Grant No. N00014-09-1-0081, and NRI. The authors also acknowledge use of NSF NNIN facilities at PSU.",

year = "2010",

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doi = "10.1063/1.3467450",

language = "English (US)",

volume = "97",

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T1 - Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3

AU - Hong, X.

AU - Hoffman, J.

AU - Posadas, A.

AU - Zou, K.

AU - Ahn, C. H.

AU - Zhu, J.

N1 - Funding Information: We are grateful to V. Crespi, P. Eklund, V. Henrich, P. Paruch, and X. Pan for helpful discussions and S.-H. Cheng and B. Wang for technical assistance. Work at Penn State is supported by NSF NIRT under Grant No. ECS-0609243 and NSF CAREER under Grant No. DMR-0748604. Fabrication of samples at Yale is supported by NSF MRSEC under Grant No. DMR-0520495, NSF under Grant No. DMR-0705799, ONR under Grant No. N00014-09-1-0081, and NRI. The authors also acknowledge use of NSF NNIN facilities at PSU.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - We have fabricated n -layer graphene field effect transistors on epitaxial ferroelectric Pb (Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high- κ dielectric with κ up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.

AB - We have fabricated n -layer graphene field effect transistors on epitaxial ferroelectric Pb (Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high- κ dielectric with κ up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.

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Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr_0.2Ti_0.8)O₃

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