Phosphine (PH 3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH 3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH 3 to silane (SiH 4) gas ratio was increased from 2 × 10 -5 to 2 × 10 -3. These results demonstrate that PH 3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Chemistry (miscellaneous)