Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

Yanfeng Wang; Kok Keong Lew; Tsung Ta Ho; Ling Pan; Steven W. Novak; Elizabeth C. Dickey; Joan M. Redwing; Theresa S. Mayer

doi:10.1021/nl051442h

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

Yanfeng Wang, Kok Keong Lew, Tsung Ta Ho, Ling Pan, Steven W. Novak, Elizabeth C. Dickey, Joan M. Redwing, Theresa S. Mayer

Research output: Contribution to journal › Article › peer-review

139 Scopus citations

Abstract

Phosphine (PH ₃) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH ₃ to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH ₃ to silane (SiH ₄) gas ratio was increased from 2 × 10 ^-5 to 2 × 10 ^-3. These results demonstrate that PH ₃ can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.

Original language	English (US)
Pages (from-to)	2139-2143
Number of pages	5
Journal	Nano letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1021/nl051442h
State	Published - Nov 2005

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl051442h

Cite this

@article{98074019ecae41b68b675a17e7ddec94,

title = "Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires",

abstract = "Phosphine (PH 3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH 3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH 3 to silane (SiH 4) gas ratio was increased from 2 × 10 -5 to 2 × 10 -3. These results demonstrate that PH 3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.",

author = "Yanfeng Wang and Lew, {Kok Keong} and Ho, {Tsung Ta} and Ling Pan and Novak, {Steven W.} and Dickey, {Elizabeth C.} and Redwing, {Joan M.} and Mayer, {Theresa S.}",

year = "2005",

month = nov,

doi = "10.1021/nl051442h",

language = "English (US)",

volume = "5",

pages = "2139--2143",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

AU - Wang, Yanfeng

AU - Lew, Kok Keong

AU - Ho, Tsung Ta

AU - Pan, Ling

AU - Novak, Steven W.

AU - Dickey, Elizabeth C.

AU - Redwing, Joan M.

AU - Mayer, Theresa S.

PY - 2005/11

Y1 - 2005/11

N2 - Phosphine (PH 3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH 3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH 3 to silane (SiH 4) gas ratio was increased from 2 × 10 -5 to 2 × 10 -3. These results demonstrate that PH 3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.

AB - Phosphine (PH 3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH 3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH 3 to silane (SiH 4) gas ratio was increased from 2 × 10 -5 to 2 × 10 -3. These results demonstrate that PH 3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.

UR - http://www.scopus.com/inward/record.url?scp=28144438699&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28144438699&partnerID=8YFLogxK

U2 - 10.1021/nl051442h

DO - 10.1021/nl051442h

M3 - Article

C2 - 16277441

AN - SCOPUS:28144438699

SN - 1530-6984

VL - 5

SP - 2139

EP - 2143

JO - Nano letters

JF - Nano letters

IS - 11

ER -

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this