Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

Yanfeng Wang; Kok Keong Lew; Tsung Ta Ho; Ling Pan; Steven W. Novak; Elizabeth C. Dickey; Joan Marie Redwing; Theresa S. Mayer

doi:10.1021/nl051442h

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

Yanfeng Wang, Kok Keong Lew, Tsung Ta Ho, Ling Pan, Steven W. Novak, Elizabeth C. Dickey, Joan Marie Redwing, Theresa S. Mayer

Research output: Contribution to journal › Article › peer-review

137 Scopus citations

Abstract

Phosphine (PH ₃) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH ₃ to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH ₃ to silane (SiH ₄) gas ratio was increased from 2 × 10 ^-5 to 2 × 10 ^-3. These results demonstrate that PH ₃ can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.

Original language	English (US)
Pages (from-to)	2139-2143
Number of pages	5
Journal	Nano Letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1021/nl051442h
State	Published - Nov 1 2005

All Science Journal Classification (ASJC) codes

Materials Science(all)
Electronic, Optical and Magnetic Materials
Chemistry (miscellaneous)

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title = "Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires",

abstract = "Phosphine (PH 3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH 3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH 3 to silane (SiH 4) gas ratio was increased from 2 × 10 -5 to 2 × 10 -3. These results demonstrate that PH 3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.",

author = "Yanfeng Wang and Lew, {Kok Keong} and Ho, {Tsung Ta} and Ling Pan and Novak, {Steven W.} and Dickey, {Elizabeth C.} and Redwing, {Joan Marie} and Mayer, {Theresa S.}",

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doi = "10.1021/nl051442h",

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TY - JOUR

T1 - Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

AU - Wang, Yanfeng

AU - Lew, Kok Keong

AU - Ho, Tsung Ta

AU - Pan, Ling

AU - Novak, Steven W.

AU - Dickey, Elizabeth C.

AU - Redwing, Joan Marie

AU - Mayer, Theresa S.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Phosphine (PH 3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH 3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH 3 to silane (SiH 4) gas ratio was increased from 2 × 10 -5 to 2 × 10 -3. These results demonstrate that PH 3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.

AB - Phosphine (PH 3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-ype conduction upon the introduction of PH 3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH 3 to silane (SiH 4) gas ratio was increased from 2 × 10 -5 to 2 × 10 -3. These results demonstrate that PH 3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.

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DO - 10.1021/nl051442h

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JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

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