TY - JOUR
T1 - V-Gate GaN HEMTs for X-Band power applications
AU - Chu, Rongming
AU - Shen, Likun
AU - Fichtenbaum, Nicholas
AU - Brown, David
AU - Chen, Zhen
AU - Keller, Stacia
AU - DenBaars, Steven P.
AU - Mishra, Umesh K.
N1 - Funding Information:
Manuscript received May 14, 2008; revised June 13, 2008. This work was supported in part by the ONR MINE project monitored by Dr. Harry Dietrich and Dr. Paul Maki, and DARPA MTO monitored by Dr. Mark Rosker. The review of this letter was arranged by Editor G. Meneghesso.
PY - 2008
Y1 - 2008
N2 - GaN high electron mobility transistors (HEMTs) with novel V-shaped gates were developed. The V-gate GaN HEMTs feature two key technologies: One is the use of an epitaxially grown GaN cap layer to isolate the surface charging from affecting the 2DEG channel; the other one is the adoption of a V-shaped gate-recess geometry that effectively mitigates the electric-field crowding at the gate edge. The combination of these two technologies enables high-voltage and dispersion-free operation without significantly sacrificing the devices' bandwidth. At 10-GHz frequency and 48-V drain bias, the V-gate devices exhibited an output power density of 12.2 W/mm with the associated power added efficiency as high as 65%. This result represents, to date, the highest reported efficiency at this frequency and operating voltage, indicating that the V-gate GaN HEMTs are suitable for X-band power applications.
AB - GaN high electron mobility transistors (HEMTs) with novel V-shaped gates were developed. The V-gate GaN HEMTs feature two key technologies: One is the use of an epitaxially grown GaN cap layer to isolate the surface charging from affecting the 2DEG channel; the other one is the adoption of a V-shaped gate-recess geometry that effectively mitigates the electric-field crowding at the gate edge. The combination of these two technologies enables high-voltage and dispersion-free operation without significantly sacrificing the devices' bandwidth. At 10-GHz frequency and 48-V drain bias, the V-gate devices exhibited an output power density of 12.2 W/mm with the associated power added efficiency as high as 65%. This result represents, to date, the highest reported efficiency at this frequency and operating voltage, indicating that the V-gate GaN HEMTs are suitable for X-band power applications.
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U2 - 10.1109/LED.2008.2001639
DO - 10.1109/LED.2008.2001639
M3 - Article
AN - SCOPUS:50649125871
SN - 0741-3106
VL - 29
SP - 974
EP - 976
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 9
ER -