V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band

Rongming Chu; Likun Shen; Nicholas Fichtenbaum; David Brown; Zhen Chen; Stacia Keller; Umesh Mishra

doi:10.1109/DRC.2008.4800804

V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Zhen Chen, Stacia Keller, Umesh Mishra

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Original language	English (US)
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	205-206
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800804
State	Published - 2008
Event	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States Duration: Jun 23 2008 → Jun 25 2008

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	66th DRC Device Research Conference Digest, DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	6/23/08 → 6/25/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2008.4800804

Cite this

@inproceedings{f8cf37fec57a4ddca8955d39d4031562,

title = "V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band",

author = "Rongming Chu and Likun Shen and Nicholas Fichtenbaum and David Brown and Zhen Chen and Stacia Keller and Umesh Mishra",

year = "2008",

doi = "10.1109/DRC.2008.4800804",

language = "English (US)",

isbn = "9781424419425",

series = "Device Research Conference - Conference Digest, DRC",

pages = "205--206",

booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",

}

Chu, R, Shen, L, Fichtenbaum, N, Brown, D, Chen, Z, Keller, S & Mishra, U 2008, V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band. in 66th DRC Device Research Conference Digest, DRC 2008., 4800804, Device Research Conference - Conference Digest, DRC, pp. 205-206, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800804

TY - GEN

T1 - V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band

AU - Chu, Rongming

AU - Shen, Likun

AU - Fichtenbaum, Nicholas

AU - Brown, David

AU - Chen, Zhen

AU - Keller, Stacia

AU - Mishra, Umesh

PY - 2008

Y1 - 2008

UR - http://www.scopus.com/inward/record.url?scp=64849086684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64849086684&partnerID=8YFLogxK

U2 - 10.1109/DRC.2008.4800804

DO - 10.1109/DRC.2008.4800804

M3 - Conference contribution

AN - SCOPUS:64849086684

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 205

EP - 206

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008

ER -

V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

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