V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures

K. O. Schweitz; P. K. Wang; S. E. Mohney; D. Gotthold

doi:10.1063/1.1459768

V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures

K. O. Schweitz, P. K. Wang, S. E. Mohney, D. Gotthold

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

A study of V/Al/Pt/Au and Ti/Al/Pt/Au contacts to n-Al_0.3Ga _0.7N/GaN heterostructures is presented. Vanadium was chosen as a potential replacement for Ti because V is expected to form a thermally stable nitride with a low work function. Low-resistance Ohmic contacts are achieved with V/Al/Pt/Au layers after annealing at 650°C, which represents a decrease of 150°C compared to the Ti/Al/Pt/Au counterpart. This contact exhibits two orders of magnitude lower specific contact resistance compared to the Ti/Al/Pt/Au contacts studied in this work when annealed at temperatures less than 800°C, although the specific contact resistance of the Ti/Al/Pt/Au contacts is lower when annealed at higher temperatures. A contact resistance and specific contact resistance of 0.8±0.1mm and (1.4±0.3) ×10^-5cm², respectively, are obtained after annealing at 650°C for 45 s.

Original language	English (US)
Pages (from-to)	1954-1956
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	11
DOIs	https://doi.org/10.1063/1.1459768
State	Published - Mar 18 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1459768

Cite this

@article{8e7aa28cd52f4838bb81d4c1cd6d319a,

title = "V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures",

abstract = "A study of V/Al/Pt/Au and Ti/Al/Pt/Au contacts to n-Al0.3Ga 0.7N/GaN heterostructures is presented. Vanadium was chosen as a potential replacement for Ti because V is expected to form a thermally stable nitride with a low work function. Low-resistance Ohmic contacts are achieved with V/Al/Pt/Au layers after annealing at 650°C, which represents a decrease of 150°C compared to the Ti/Al/Pt/Au counterpart. This contact exhibits two orders of magnitude lower specific contact resistance compared to the Ti/Al/Pt/Au contacts studied in this work when annealed at temperatures less than 800°C, although the specific contact resistance of the Ti/Al/Pt/Au contacts is lower when annealed at higher temperatures. A contact resistance and specific contact resistance of 0.8±0.1mm and (1.4±0.3) ×10-5cm2, respectively, are obtained after annealing at 650°C for 45 s.",

author = "Schweitz, {K. O.} and Wang, {P. K.} and Mohney, {S. E.} and D. Gotthold",

year = "2002",

month = mar,

day = "18",

doi = "10.1063/1.1459768",

language = "English (US)",

volume = "80",

pages = "1954--1956",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures

AU - Schweitz, K. O.

AU - Wang, P. K.

AU - Mohney, S. E.

AU - Gotthold, D.

PY - 2002/3/18

Y1 - 2002/3/18

N2 - A study of V/Al/Pt/Au and Ti/Al/Pt/Au contacts to n-Al0.3Ga 0.7N/GaN heterostructures is presented. Vanadium was chosen as a potential replacement for Ti because V is expected to form a thermally stable nitride with a low work function. Low-resistance Ohmic contacts are achieved with V/Al/Pt/Au layers after annealing at 650°C, which represents a decrease of 150°C compared to the Ti/Al/Pt/Au counterpart. This contact exhibits two orders of magnitude lower specific contact resistance compared to the Ti/Al/Pt/Au contacts studied in this work when annealed at temperatures less than 800°C, although the specific contact resistance of the Ti/Al/Pt/Au contacts is lower when annealed at higher temperatures. A contact resistance and specific contact resistance of 0.8±0.1mm and (1.4±0.3) ×10-5cm2, respectively, are obtained after annealing at 650°C for 45 s.

AB - A study of V/Al/Pt/Au and Ti/Al/Pt/Au contacts to n-Al0.3Ga 0.7N/GaN heterostructures is presented. Vanadium was chosen as a potential replacement for Ti because V is expected to form a thermally stable nitride with a low work function. Low-resistance Ohmic contacts are achieved with V/Al/Pt/Au layers after annealing at 650°C, which represents a decrease of 150°C compared to the Ti/Al/Pt/Au counterpart. This contact exhibits two orders of magnitude lower specific contact resistance compared to the Ti/Al/Pt/Au contacts studied in this work when annealed at temperatures less than 800°C, although the specific contact resistance of the Ti/Al/Pt/Au contacts is lower when annealed at higher temperatures. A contact resistance and specific contact resistance of 0.8±0.1mm and (1.4±0.3) ×10-5cm2, respectively, are obtained after annealing at 650°C for 45 s.

UR - http://www.scopus.com/inward/record.url?scp=79956027304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956027304&partnerID=8YFLogxK

U2 - 10.1063/1.1459768

DO - 10.1063/1.1459768

M3 - Article

AN - SCOPUS:79956027304

SN - 0003-6951

VL - 80

SP - 1954

EP - 1956

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this