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V/Al/V/Ag contacts to n -GaN and n -AlGaN
M. A. Miller
, S. K. Lin
,
S. E. Mohney
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
:
Contribution to journal
›
Article
›
peer-review
12
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Scopus citations
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Dive into the research topics of 'V/Al/V/Ag contacts to n -GaN and n -AlGaN'. Together they form a unique fingerprint.
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Keyphrases
Aluminum Gallium Nitride (AlGaN)
100%
N-GaN
100%
Ag Contact
100%
Specific Contact Resistance
80%
Annealing
40%
Smooth Surface
40%
Semiconductors
40%
Ag Metallization
40%
Transmission Electron Microscopy
20%
Metallization
20%
Field Emission
20%
Processing Conditions
20%
Low Resistance
20%
Low-resistance Ohmic Contacts
20%
Edge Definition
20%
GaN Heterostructure
20%
V(V)
20%
Current Transport Mechanism
20%
Resistance Surface
20%
GaN Cap
20%
Contact Morphology
20%
N It
20%
Metal Layer Thickness
20%
Engineering
Metallizations
100%
Smooth Surface
66%
Layer Thickness
33%
Heterostructures
33%
Field Emission
33%
Ohmic Contacts
33%
Processing Condition
33%
Metal Layer
33%
Edge Definition
33%
Transport Mechanism
33%
Layer Processing
33%
Phase Composition
33%
Material Science
Contact Resistance
100%
Surface (Surface Science)
50%
Heterojunction
25%
Transmission Electron Microscopy
25%
Composite Material
25%
Phase Composition
25%
Chemical Engineering
Metallizing
100%
Food Science
Transmission Electron Microscopy
100%