Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N

J. H. Wang, S. E. Mohney, S. H. Wang, U. Chowdhury, R. D. Dupuis

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27 Scopus citations


Four vanadium-based contacts to n-type Al0.6Ga0.4N were compared in this work. Both V/Al/Pd/Au and V/Al/V/Au contacts with optimized layer thicknesses provided lower specific-contact resistances than did the previously reported V/Al/Pt/Au ohmic contact. Specific contact resistances of the V/Al/Pd/Au (15 nm/85 nm/20 nm/95 nm) and V/Al/V/Au (15 nm/85 nm/20 nm/95 nm) contacts were 3 × 10-6 Ω·cm2 and 4 × 10-6 Ω·cm2, respectively. On the other hand, an analogous V/Al/Mo/Au contact never became ohmic, even after it was annealed at 900°C for 30 sec. Compared to the V/Al/Pd/Au contact, the V/AW/Au contact required a less severe annealing condition (30 sec at 700°C instead of 850°C). The V/Al/V/Au contact also provided a smoother surface, with a root-mean-square (RMS) roughness of 39 nm.

Original languageEnglish (US)
Pages (from-to)418-421
Number of pages4
JournalJournal of Electronic Materials
Issue number5
StatePublished - May 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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