Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

Joan M. Redwing; Yue Ke; Xin Wang; Chad Eichfeld; Xiaojun Weng; Chito E. Kendrick; Suzanne E. Mohney; Theresa S. Mayer

doi:10.1109/ISDRS.2011.6135144

Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

Joan M. Redwing
, Yue Ke
, Xin Wang
, Chad Eichfeld
, Xiaojun Weng
, Chito E. Kendrick
, Suzanne E. Mohney
, Theresa S. Mayer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O ₂ and H ₂O, which results in the formation of a surface oxide layer that impedes nanowire growth.

Original language	English (US)
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135144
State	Published - 2011
Event	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: Dec 7 2011 → Dec 9 2011

Publication series

Name	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other	2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country/Territory	United States
City	College Park, MD
Period	12/7/11 → 12/9/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ISDRS.2011.6135144

Cite this

Redwing, J. M., Ke, Y., Wang, X., Eichfeld, C., Weng, X., Kendrick, C. E., Mohney, S. E., & Mayer, T. S. (2011). Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 Article 6135144 (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135144

@inproceedings{431feaa611f04c44843d5d2f0da5c03a,

title = "Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires",

abstract = "Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.",

author = "Redwing, \{Joan M.\} and Yue Ke and Xin Wang and Chad Eichfeld and Xiaojun Weng and Kendrick, \{Chito E.\} and Mohney, \{Suzanne E.\} and Mayer, \{Theresa S.\}",

year = "2011",

doi = "10.1109/ISDRS.2011.6135144",

language = "English (US)",

isbn = "9781457717550",

series = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

}

Redwing, JM, Ke, Y, Wang, X, Eichfeld, C, Weng, X, Kendrick, CE, Mohney, SE & Mayer, TS 2011, Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135144, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135144

Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. / Redwing, Joan M.; Ke, Yue; Wang, Xin et al.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135144 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

AU - Redwing, Joan M.

AU - Ke, Yue

AU - Wang, Xin

AU - Eichfeld, Chad

AU - Weng, Xiaojun

AU - Kendrick, Chito E.

AU - Mohney, Suzanne E.

AU - Mayer, Theresa S.

PY - 2011

Y1 - 2011

N2 - Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.

AB - Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.

UR - https://www.scopus.com/pages/publications/84863142202

UR - https://www.scopus.com/pages/publications/84863142202#tab=citedBy

U2 - 10.1109/ISDRS.2011.6135144

DO - 10.1109/ISDRS.2011.6135144

M3 - Conference contribution

AN - SCOPUS:84863142202

SN - 9781457717550

T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

Abstract

Publication series

Other

UN SDGs

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this