Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires

Kok Keong Lew; Ling Pan; Elizabeth C. Dickey; Joan M. Redwing

doi:10.1002/adma.200306035

Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires

Kok Keong Lew, Ling Pan, Elizabeth C. Dickey, Joan M. Redwing

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

The effect of growth temperature and inlet gas composition on the vapor-liquid-solid (VLS) growth of silicon-germanium (SiGe) alloy nanowires was studied. The growth conditions needed to produce nanowires with uniform and controlled alloy composition in both the radial and axial direction were identified. The structural properties and elemental compositions of the nanowires were characterized using transmission electron microscopy (TEM). The SiGe nanowires grown at 500°C were shorter due to the depletion of the Ge from the gas phase and deposition of Ge on the gold tips, which prevented the continuous growth of SiGe nanowires.

Original language	English (US)
Pages (from-to)	2073-2076
Number of pages	4
Journal	Advanced Materials
Volume	15
Issue number	24
DOIs	https://doi.org/10.1002/adma.200306035
State	Published - Dec 17 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires",

abstract = "The effect of growth temperature and inlet gas composition on the vapor-liquid-solid (VLS) growth of silicon-germanium (SiGe) alloy nanowires was studied. The growth conditions needed to produce nanowires with uniform and controlled alloy composition in both the radial and axial direction were identified. The structural properties and elemental compositions of the nanowires were characterized using transmission electron microscopy (TEM). The SiGe nanowires grown at 500°C were shorter due to the depletion of the Ge from the gas phase and deposition of Ge on the gold tips, which prevented the continuous growth of SiGe nanowires.",

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AU - Lew, Kok Keong

AU - Pan, Ling

AU - Dickey, Elizabeth C.

AU - Redwing, Joan M.

PY - 2003/12/17

Y1 - 2003/12/17

N2 - The effect of growth temperature and inlet gas composition on the vapor-liquid-solid (VLS) growth of silicon-germanium (SiGe) alloy nanowires was studied. The growth conditions needed to produce nanowires with uniform and controlled alloy composition in both the radial and axial direction were identified. The structural properties and elemental compositions of the nanowires were characterized using transmission electron microscopy (TEM). The SiGe nanowires grown at 500°C were shorter due to the depletion of the Ge from the gas phase and deposition of Ge on the gold tips, which prevented the continuous growth of SiGe nanowires.

AB - The effect of growth temperature and inlet gas composition on the vapor-liquid-solid (VLS) growth of silicon-germanium (SiGe) alloy nanowires was studied. The growth conditions needed to produce nanowires with uniform and controlled alloy composition in both the radial and axial direction were identified. The structural properties and elemental compositions of the nanowires were characterized using transmission electron microscopy (TEM). The SiGe nanowires grown at 500°C were shorter due to the depletion of the Ge from the gas phase and deposition of Ge on the gold tips, which prevented the continuous growth of SiGe nanowires.

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EP - 2076

JO - Advanced Materials

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ER -

Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires

Abstract

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