Vapor-liquid-solid growth of Si1-xGex and Ge/Si 1-xGex axial heterostructured nanowires

Sharis Minassian, Xiaojun Weng, Joan M. Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of growth conditions on the composition of Si 1-xGex nanowires fabricated by vapor-liquid-solid growth using Si2H6 and GeH4 sources was investigated. The use of Si2H6 resulted in an increase in Si incorporation in the Si1-xGex nanowires at lower growth temperatures compared to SiH4 which is more commonly used. A wide range of Ge compositions from -20-80% was achieved by changing the inlet gas ratio at a constant temperature in the range of 350-425°C. Using these conditions, Ge/Si1-xGex axial heterostructured nanowires were also fabricated at 375°C with Ge compositions of 92% and 66% in the SiGe segment and the morphology and interfacial compositional profile of the nanowires were examined.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages699-706
Number of pages8
Edition6
ISBN (Electronic)9781607681755
ISBN (Print)9781566778251
DOIs
StatePublished - 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • General Engineering

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