@inproceedings{e128a78856594fec87efb24bf4777369,
title = "Vapor-liquid-solid growth of Si1-xGex and Ge/Si 1-xGex axial heterostructured nanowires",
abstract = "The effect of growth conditions on the composition of Si 1-xGex nanowires fabricated by vapor-liquid-solid growth using Si2H6 and GeH4 sources was investigated. The use of Si2H6 resulted in an increase in Si incorporation in the Si1-xGex nanowires at lower growth temperatures compared to SiH4 which is more commonly used. A wide range of Ge compositions from -20-80% was achieved by changing the inlet gas ratio at a constant temperature in the range of 350-425°C. Using these conditions, Ge/Si1-xGex axial heterostructured nanowires were also fabricated at 375°C with Ge compositions of 92% and 66% in the SiGe segment and the morphology and interfacial compositional profile of the nanowires were examined.",
author = "Sharis Minassian and Xiaojun Weng and Redwing, {Joan M.}",
year = "2010",
doi = "10.1149/1.3487600",
language = "English (US)",
isbn = "9781566778251",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "699--706",
booktitle = "SiGe, Ge, and Related Compounds 4",
edition = "6",
}