TY - JOUR
T1 - Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
AU - Ruzmetov, Dmitry
AU - Zhang, Kehao
AU - Stan, Gheorghe
AU - Kalanyan, Berc
AU - Bhimanapati, Ganesh R.
AU - Eichfeld, Sarah M.
AU - Burke, Robert A.
AU - Shah, Pankaj B.
AU - O'Regan, Terrance P.
AU - Crowne, Frank J.
AU - Birdwell, A. Glen
AU - Robinson, Joshua A.
AU - Davydov, Albert V.
AU - Ivanov, Tony G.
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/3/22
Y1 - 2016/3/22
N2 - When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm2 and current spreading in the MoS2 monolayer of approximately 1 μm in diameter.
AB - When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm2 and current spreading in the MoS2 monolayer of approximately 1 μm in diameter.
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U2 - 10.1021/acsnano.5b08008
DO - 10.1021/acsnano.5b08008
M3 - Article
C2 - 26866442
AN - SCOPUS:84961928105
SN - 1936-0851
VL - 10
SP - 3580
EP - 3588
JO - ACS nano
JF - ACS nano
IS - 3
ER -