Vertical and in-plane heterostructures from WS 2 /MoS 2 monolayers

Yongji Gong, Junhao Lin, Xingli Wang, Gang Shi, Sidong Lei, Zhong Lin, Xiaolong Zou, Gonglan Ye, Robert Vajtai, Boris I. Yakobson, Humberto Terrones, Mauricio Terrones, Beng Kang Tay, Jun Lou, Sokrates T. Pantelides, Zheng Liu, Wu Zhou, Pulickel M. Ajayan

Research output: Contribution to journalArticlepeer-review

1801 Scopus citations


Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS 2 /MoS 2 via control of the growth temperature. Vertically stacked bilayers with WS 2 epitaxially grown on top of the MoS 2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS 2 on MoS 2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.

Original languageEnglish (US)
Pages (from-to)1135-1142
Number of pages8
JournalNature Materials
Issue number12
StatePublished - Dec 1 2014

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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