Abstract
A vertical short gate GaAs FET structure is constructed. The main manufacturing steps are briefly outlined.
Original language | English (US) |
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Pages (from-to) | 6418-6420 |
Number of pages | 3 |
Journal | IBM technical disclosure bulletin |
Volume | 25 |
Issue number | 12 |
State | Published - Jan 1 1983 |
All Science Journal Classification (ASJC) codes
- General Engineering