VERTICAL SHORT GATE FET STRUCTURE.

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Abstract

A vertical short gate GaAs FET structure is constructed. The main manufacturing steps are briefly outlined.

Original language	English (US)
Pages (from-to)	6418-6420
Number of pages	3
Journal	IBM technical disclosure bulletin
Volume	25
Issue number	12
State	Published - Jan 1 1983

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title = "VERTICAL SHORT GATE FET STRUCTURE.",

abstract = "A vertical short gate GaAs FET structure is constructed. The main manufacturing steps are briefly outlined.",

author = "Jackson, \{Thomas Nelson\}",

year = "1983",

month = jan,

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language = "English (US)",

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pages = "6418--6420",

journal = "IBM technical disclosure bulletin",

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AU - Jackson, Thomas Nelson

PY - 1983/1/1

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N2 - A vertical short gate GaAs FET structure is constructed. The main manufacturing steps are briefly outlined.

AB - A vertical short gate GaAs FET structure is constructed. The main manufacturing steps are briefly outlined.

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JO - IBM technical disclosure bulletin

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