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Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n
+
-In
0.53
Ga
0.47
As
Michael Abraham
, Shih Ying Yu
, Won Hyuck Choi
, Rinus T.P. Lee
,
Suzanne E. Mohney
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
:
Contribution to journal
›
Article
›
peer-review
15
Scopus citations
Overview
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Dive into the research topics of 'Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n
+
-In
0.53
Ga
0.47
As'. Together they form a unique fingerprint.
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Keyphrases
Annealing
100%
Ohmic Contact
100%
Surface Treatment
100%
Low Resistance
100%
Ni-based
100%
Transmission Electron Microscopy
50%
Epilayer
50%
Contact Resistance
50%
Semiconductors
50%
Silicide
50%
Native Oxide
50%
Specific Contact Resistance
50%
InGaAs
50%
Low-resistance Ohmic Contacts
50%
Treatment Results
50%
Complete Elimination
50%
Contact Interface
50%
Pre-Metallization
50%
Self-aligned
50%
Material Science
Contact Resistance
100%
Surface Treatment
100%
Oxide Compound
50%
Transmission Electron Microscopy
50%
Epilayers
50%
Silicide
50%
Indium Gallium Arsenide
50%
Chemical Engineering
Silicide
100%
Metallizing
100%
Engineering
Aligned Source
50%