@inproceedings{c4adb3a5e9ac48258527feeff7bbe7c5,
title = "Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning",
abstract = "A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5%. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0-100 V tuning voltage. The maximum oscillator phase noise is -81.4 dBc/Hz at 100 kHz offset.",
author = "Alan Victor and Jayesh Nath and Dipankar Ghosh and Seymen Aygun and Walter Nagy and Maria, {Jon Paul} and Kingon, {Angus I.} and Steer, {Michael B.}",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/EUMC.2006.281206",
language = "English (US)",
isbn = "2960055160",
series = "Proceedings of the 36th European Microwave Conference, EuMC 2006",
publisher = "IEEE Computer Society",
pages = "87--90",
booktitle = "Proceedings of the 36th European Microwave Conference, EuMC 2006",
address = "United States",
note = "36th European Microwave Conference, EuMC 2006 ; Conference date: 10-09-2006 Through 12-09-2006",
}