Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors

Ali Tombak, Jon Paul Maria, Francisco T. Ayguavives, Zhang Jin, Gregory T. Stauf, Angus I. Kingon, Amir Mortazawi

Research output: Contribution to journalArticlepeer-review

209 Scopus citations

Abstract

Tunable lowpass and bandpass lumped-element filters employing barium-strontium-titanate (BST)-based capacitors are presented. A new metallization technique is used, which improves the quality factor of the tunable BST capacitors by a factor of two. The lowpass filter has an insertion loss of 2 dB and a tunability of 40% (120-170 MHz) with the application of 0-9-V dc bias. The bandpass filter (BPF) has an insertion loss of 3 dB and a tunability of 57% (176-276 MHz) with the application of 0-6 V dc. The third-order intercept point of the BPF was measured to be 19 dBm with the application of two tones around 170 MHz.

Original languageEnglish (US)
Pages (from-to)462-467
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume51
Issue number2 I
DOIs
StatePublished - Feb 2003

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors'. Together they form a unique fingerprint.

Cite this