Voltage-current characteristics of a high Tc superconducting field effect device

X. X. Xi; C. Doughty; A. Walkenhorst; S. N. Mao; Qi Li; T. Venkatesan

doi:10.1063/1.108241

Voltage-current characteristics of a high T_c superconducting field effect device

X. X. Xi
, C. Doughty
, A. Walkenhorst
, S. N. Mao
, Qi Li
, T. Venkatesan

Physics

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The source-drain voltage-current characteristics of a high T_c field-effect device consisting of a YBa₂Cu₃O _7-x/SrTiO₃/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 Å thick YBa ₂Cu₃O_7-x channel layer (T_c=43 K) with a high critical current density J_c (5 K) over 1×10 ⁵ A/cm². A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.

Original language	English (US)
Pages (from-to)	2353-2355
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	19
DOIs	https://doi.org/10.1063/1.108241
State	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.108241

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title = "Voltage-current characteristics of a high Tc superconducting field effect device",

abstract = "The source-drain voltage-current characteristics of a high Tc field-effect device consisting of a YBa2Cu3O 7-x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 {\AA} thick YBa 2Cu3O7-x channel layer (Tc=43 K) with a high critical current density Jc (5 K) over 1×10 5 A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.",

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T1 - Voltage-current characteristics of a high Tc superconducting field effect device

AU - Xi, X. X.

AU - Doughty, C.

AU - Walkenhorst, A.

AU - Mao, S. N.

AU - Li, Qi

AU - Venkatesan, T.

PY - 1992

Y1 - 1992

N2 - The source-drain voltage-current characteristics of a high Tc field-effect device consisting of a YBa2Cu3O 7-x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 Å thick YBa 2Cu3O7-x channel layer (Tc=43 K) with a high critical current density Jc (5 K) over 1×10 5 A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.

AB - The source-drain voltage-current characteristics of a high Tc field-effect device consisting of a YBa2Cu3O 7-x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 Å thick YBa 2Cu3O7-x channel layer (Tc=43 K) with a high critical current density Jc (5 K) over 1×10 5 A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.

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ER -

Voltage-current characteristics of a high T_c superconducting field effect device

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