Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands

Jia Mian Hu; T. N. Yang; L. Q. Chen; C. W. Nan

doi:10.1063/1.4804157

Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands

Jia Mian Hu, T. N. Yang, L. Q. Chen, C. W. Nan

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We show that, using phase-field simulations, large voltage-driven perpendicular magnetic domain switching can be realized in magnetic- ferroelectric nanoislands with relieved substrate constraint, which is difficult in continuous multiferroic layered thin films due to significant substrate clamping. The as-grown magnetic and ferroelectric domain structures in the heterostructured nanoislands can be tailored by engineering their respective geometric sizes and/or the underlying substrate strain. Influences of the lateral size of the island on the dynamic voltage-driven magnetic domain switching are addressed, whereby an optimum lateral size is identified for illustration. Thus, such three-dimensional multiferroic nanoislands should provide great flexibilities for designing novel high-density spintronic/microelectronic devices with purely voltage-driven means.

Original language	English (US)
Article number	194301
Journal	Journal of Applied Physics
Volume	113
Issue number	19
DOIs	https://doi.org/10.1063/1.4804157
State	Published - May 21 2013

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4804157

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@article{78ecf8a053464d36b251e01ac5450b99,

title = "Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands",

abstract = "We show that, using phase-field simulations, large voltage-driven perpendicular magnetic domain switching can be realized in magnetic- ferroelectric nanoislands with relieved substrate constraint, which is difficult in continuous multiferroic layered thin films due to significant substrate clamping. The as-grown magnetic and ferroelectric domain structures in the heterostructured nanoislands can be tailored by engineering their respective geometric sizes and/or the underlying substrate strain. Influences of the lateral size of the island on the dynamic voltage-driven magnetic domain switching are addressed, whereby an optimum lateral size is identified for illustration. Thus, such three-dimensional multiferroic nanoislands should provide great flexibilities for designing novel high-density spintronic/microelectronic devices with purely voltage-driven means.",

author = "Hu, {Jia Mian} and Yang, {T. N.} and Chen, {L. Q.} and Nan, {C. W.}",

note = "Funding Information: This work was supported by the National Basic Research Program of China (Grant No. 2009CB623303), the NSF of China (Grant Nos. 11234005 and 50921061), and the NSF (Grant No. DMR-1006541). The computer simulations were carried out on the LION and Cyberstar clusters at the Pennsylvania State University supported in part by NSF Major Research Instrumentation Program through grant OCI-0821527 and in part by the Materials Simulation Center and the Graduated Education and Research Services at the Pennsylvania State University.",

year = "2013",

month = may,

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doi = "10.1063/1.4804157",

language = "English (US)",

volume = "113",

journal = "Journal of Applied Physics",

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T1 - Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands

AU - Hu, Jia Mian

AU - Yang, T. N.

AU - Chen, L. Q.

AU - Nan, C. W.

N1 - Funding Information: This work was supported by the National Basic Research Program of China (Grant No. 2009CB623303), the NSF of China (Grant Nos. 11234005 and 50921061), and the NSF (Grant No. DMR-1006541). The computer simulations were carried out on the LION and Cyberstar clusters at the Pennsylvania State University supported in part by NSF Major Research Instrumentation Program through grant OCI-0821527 and in part by the Materials Simulation Center and the Graduated Education and Research Services at the Pennsylvania State University.

PY - 2013/5/21

Y1 - 2013/5/21

N2 - We show that, using phase-field simulations, large voltage-driven perpendicular magnetic domain switching can be realized in magnetic- ferroelectric nanoislands with relieved substrate constraint, which is difficult in continuous multiferroic layered thin films due to significant substrate clamping. The as-grown magnetic and ferroelectric domain structures in the heterostructured nanoislands can be tailored by engineering their respective geometric sizes and/or the underlying substrate strain. Influences of the lateral size of the island on the dynamic voltage-driven magnetic domain switching are addressed, whereby an optimum lateral size is identified for illustration. Thus, such three-dimensional multiferroic nanoislands should provide great flexibilities for designing novel high-density spintronic/microelectronic devices with purely voltage-driven means.

AB - We show that, using phase-field simulations, large voltage-driven perpendicular magnetic domain switching can be realized in magnetic- ferroelectric nanoislands with relieved substrate constraint, which is difficult in continuous multiferroic layered thin films due to significant substrate clamping. The as-grown magnetic and ferroelectric domain structures in the heterostructured nanoislands can be tailored by engineering their respective geometric sizes and/or the underlying substrate strain. Influences of the lateral size of the island on the dynamic voltage-driven magnetic domain switching are addressed, whereby an optimum lateral size is identified for illustration. Thus, such three-dimensional multiferroic nanoislands should provide great flexibilities for designing novel high-density spintronic/microelectronic devices with purely voltage-driven means.

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Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands

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