@inproceedings{b2701e4b7b5545d1ae0b6d6caa3f10ba,
title = "Wafer level EDMR: Magnetic resonance in a probing station",
abstract = "We report on a novel semiconductor reliability technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union with a semiconductor probing station allows EDMR measurements to be performed at the wafer level. Our measurements forgo a microwave cavity or resonator for a very small non-resonant near field microwave probe [1]. Bipolar amplification effect (BAE) [4] and spin dependent charge pumping (SDCP) [5] were demonstrated on various SiC MOSFET structures. These measurements were made via frequency-swept EDMR. The elimination of the resonance cavity, and incorporation with a wafer probing station, greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.",
author = "Mccrory, {Duane J.} and Anders, {Mark A.} and Ryan, {Jason T.} and Shrestha, {Pragya R.} and Campbell, {Jason P.} and Lenahan, {Patrick M.} and Cheung, {Kin P.}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Integrated Reliability Workshop, IIRW 2017 ; Conference date: 08-10-2017 Through 12-10-2017",
year = "2017",
month = jul,
day = "2",
doi = "10.1109/IIRW.2017.8361231",
language = "English (US)",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
booktitle = "2017 IEEE International Integrated Reliability Workshop, IIRW 2017",
address = "United States",
}