@inproceedings{25b0393e294a41c684d4bd2776aa3794,
title = "Wafer-level near zero field spin dependent charge pumping: Effects of nitrogen on 4H-SiC MOSFETs",
abstract = "In this work, we describe a new way to measure spin dependent charge capture events at metal-oxide-semiconductor field-effect transistor interfaces (MOSFET) called near-zero-field spin dependent charge pumping (NZF SDCP) which yields similar information as conventional electron paramagnetic resonance. We find that nitric oxide post oxidation anneals have a significant effect on the spectra obtained from 4H-silicon carbide MOSFETs. We also likely resolve hyperfine interactions which are important for defect identification. Finally, we fully integrate a NZF SDCP measurement system into a wafer prober for high throughput applications.",
author = "Anders, {Mark A.} and Lenahan, {Patrick M.} and Ryan, {J. T.}",
note = "Publisher Copyright: {\textcopyright} 2020 Trans Tech Publications Ltd, Switzerland.; 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 ; Conference date: 29-09-2019 Through 04-10-2019",
year = "2020",
doi = "10.4028/www.scientific.net/MSF.1004.573",
language = "English (US)",
isbn = "9783035715798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "573--580",
editor = "Hiroshi Yano and Takeshi Ohshima and Kazuma Eto and Takeshi Mitani and Shinsuke Harada and Yasunori Tanaka",
booktitle = "Silicon Carbide and Related Materials 2019",
}