TY - JOUR
T1 - Wafer mapping of the transverse piezoelectric coefficient, e 31,f, using the wafer flexure technique with sputter deposited Pt strain gauges
AU - Wilke, Rudeger H.T.
AU - Moses, Paul J.
AU - Jousse, Pierre
AU - Yeager, Charles
AU - Trolier-McKinstry, Susan
N1 - Funding Information:
This work was supported by grants from the Moore Foundation and from an APRA grant via subtracts SV0-79020 and SV-79021 from the Smithsonian Astrophysical Laboratory . The work was performed using the facilities at the W.M. Keck Smart Materials Integration Laboratory and the National Nanofabrication Infrastructure Network site at Penn State.
PY - 2012/1
Y1 - 2012/1
N2 - Measurement of the transverse piezoelectric coefficient (e 31,f) in thin films is crucial for the development of microfabricated sensors, actuators, and transducers. Here, a method is described such that lithographically defined strain gauges enable non-destructive, position-dependent characterization of e 31,f in conjunction with the wafer flexure technique. Measurements of 100 nm thick Pt gauges deposited on 1 μm thick PbZr 0.52Ti 0.48O 3 thin films yield gauge factors of 6.24, with a gauge-to-gauge variation that is 5% of this value. The system allows for simultaneous measurement of the charge and strain, improving the overall accuracy of measurement. The small footprint of the combined strain gauge array/electrode pattern used for determining e 31,f, allows for a non-destructive mapping of the transverse piezoelectric coefficient across large-area wafers. Due to the clamping configuration used in wafer flexure experiments, e 31,f values can accurately be obtained within the central ∼2/3 of a full wafer. Measurements performed on a 1.3 μm thick randomly oriented polycrystalline PbZr 0.52Ti 0.48O 3 film made deposited on a 4 in. platinized silicon wafer by the sol-gel process show a high degree of uniformity, with e 31,f of -6.37 ± 0.60 C/m 2 for points measured within r = 3 cm.
AB - Measurement of the transverse piezoelectric coefficient (e 31,f) in thin films is crucial for the development of microfabricated sensors, actuators, and transducers. Here, a method is described such that lithographically defined strain gauges enable non-destructive, position-dependent characterization of e 31,f in conjunction with the wafer flexure technique. Measurements of 100 nm thick Pt gauges deposited on 1 μm thick PbZr 0.52Ti 0.48O 3 thin films yield gauge factors of 6.24, with a gauge-to-gauge variation that is 5% of this value. The system allows for simultaneous measurement of the charge and strain, improving the overall accuracy of measurement. The small footprint of the combined strain gauge array/electrode pattern used for determining e 31,f, allows for a non-destructive mapping of the transverse piezoelectric coefficient across large-area wafers. Due to the clamping configuration used in wafer flexure experiments, e 31,f values can accurately be obtained within the central ∼2/3 of a full wafer. Measurements performed on a 1.3 μm thick randomly oriented polycrystalline PbZr 0.52Ti 0.48O 3 film made deposited on a 4 in. platinized silicon wafer by the sol-gel process show a high degree of uniformity, with e 31,f of -6.37 ± 0.60 C/m 2 for points measured within r = 3 cm.
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U2 - 10.1016/j.sna.2011.10.030
DO - 10.1016/j.sna.2011.10.030
M3 - Article
AN - SCOPUS:84655169817
SN - 0924-4247
VL - 173
SP - 152
EP - 157
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
IS - 1
ER -