TY - JOUR
T1 - Wall velocities, switching times, and the stabilization mechanism of 180° domains in congruent LiTaO3 crystals
AU - Gopalan, Venkatraman
AU - Mitchell, Terence E.
PY - 1998/1/15
Y1 - 1998/1/15
N2 - A systematic study of the kinetics of 180° domains as a function of external electric field is presented for Z-cut LiTaO3 single crystal wafers at room temperature using transient current measurements combined with nondestructive and real-time imaging of 180° domains by light microscopy. The switching time, wall velocity, and nucleation rate follow an exponential behavior with the applied field. A model is proposed which shows that the nucleation and sideways growth of domains play approximately equal parts in determining the switching time. A domain stabilization process occurs on the time scale of a few seconds even at electric fields where the switching time is milliseconds or less. We show that this stabilization process has a strong correlation to the internal fields in the crystal.
AB - A systematic study of the kinetics of 180° domains as a function of external electric field is presented for Z-cut LiTaO3 single crystal wafers at room temperature using transient current measurements combined with nondestructive and real-time imaging of 180° domains by light microscopy. The switching time, wall velocity, and nucleation rate follow an exponential behavior with the applied field. A model is proposed which shows that the nucleation and sideways growth of domains play approximately equal parts in determining the switching time. A domain stabilization process occurs on the time scale of a few seconds even at electric fields where the switching time is milliseconds or less. We show that this stabilization process has a strong correlation to the internal fields in the crystal.
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U2 - 10.1063/1.366782
DO - 10.1063/1.366782
M3 - Article
AN - SCOPUS:0001326281
SN - 0021-8979
VL - 83
SP - 941
EP - 954
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 2
ER -