Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi 2Se 3

Sadashige Matsuo; Tomohiro Koyama; Kazutoshi Shimamura; Tomonori Arakawa; Yoshitaka Nishihara; Daichi Chiba; Kensuke Kobayashi; Teruo Ono; Cui Zu Chang; Ke He; Xu Cun Ma; Qi Kun Xue

doi:10.1103/PhysRevB.85.075440

Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi ₂Se ₃

Sadashige Matsuo, Tomohiro Koyama, Kazutoshi Shimamura, Tomonori Arakawa, Yoshitaka Nishihara, Daichi Chiba, Kensuke Kobayashi, Teruo Ono, Cui Zu Chang, Ke He, Xu Cun Ma, Qi Kun Xue

Physics

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi ₂Se ₃ thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

Original language	English (US)
Article number	075440
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	85
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.85.075440
State	Published - Feb 29 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.85.075440

Cite this

Matsuo, S., Koyama, T., Shimamura, K., Arakawa, T., Nishihara, Y., Chiba, D., Kobayashi, K., Ono, T., Chang, C. Z., He, K., Ma, X. C., & Xue, Q. K. (2012). Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi ₂Se ₃ Physical Review B - Condensed Matter and Materials Physics, 85(7), Article 075440. https://doi.org/10.1103/PhysRevB.85.075440

@article{0eec118f8c8444038fbe460186125a9f,

title = "Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi 2Se 3 ",

abstract = "In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi 2Se 3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.",

author = "Sadashige Matsuo and Tomohiro Koyama and Kazutoshi Shimamura and Tomonori Arakawa and Yoshitaka Nishihara and Daichi Chiba and Kensuke Kobayashi and Teruo Ono and Chang, {Cui Zu} and Ke He and Ma, {Xu Cun} and Xue, {Qi Kun}",

year = "2012",

month = feb,

day = "29",

doi = "10.1103/PhysRevB.85.075440",

language = "English (US)",

volume = "85",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "7",

}

TY - JOUR

T1 - Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi 2Se 3

AU - Matsuo, Sadashige

AU - Koyama, Tomohiro

AU - Shimamura, Kazutoshi

AU - Arakawa, Tomonori

AU - Nishihara, Yoshitaka

AU - Chiba, Daichi

AU - Kobayashi, Kensuke

AU - Ono, Teruo

AU - Chang, Cui Zu

AU - He, Ke

AU - Ma, Xu Cun

AU - Xue, Qi Kun

PY - 2012/2/29

Y1 - 2012/2/29

N2 - In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi 2Se 3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

AB - In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi 2Se 3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

UR - http://www.scopus.com/inward/record.url?scp=84863261056&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863261056&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.85.075440

DO - 10.1103/PhysRevB.85.075440

M3 - Article

AN - SCOPUS:84863261056

SN - 1098-0121

VL - 85

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

M1 - 075440

ER -

Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi ₂Se ₃

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this