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Write-optimized reliable design of STT MRAM
Yusung Kim
, Sumeet Kumar Gupta
, Sang Phill Park
, Georgios Panagopoulos
, Kaushik Roy
Electrical Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
66
Scopus citations
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Keyphrases
Spin-transfer Torque Magnetic RAM (STT-MRAM)
100%
Reliable Design
100%
Write Power
75%
Bitcell
50%
Design Techniques
50%
Current Density
50%
Voltage Clamp
25%
Power Saving
25%
Bitline
25%
Proposed Design
25%
Process Variation
25%
Circuit Design
25%
Reading Performance
25%
Non-volatile Memory
25%
Writing Ability
25%
Read Stability
25%
1-bit
25%
High Integration
25%
Integration Density
25%
Line Voltage
25%
Cell Design
25%
Dual Source
25%
Memory Design
25%
Computer Science
Random Access Memory
100%
Design Technique
66%
Process Variation
33%
Non-Volatile Memory
33%
Memory Design
33%